NEW DESIGN TRANSISTORS
In late November, Intel announced the development of a fundamentally new transistor design and development of new materials for their manufacture. This is the so-called #39;depleted transistors on a substrate#39; (depleted substrate transistor) and #39;highly insulating dielectric K-gate#39; (high k gate dielectric). The transistors of the new type will be called terahertz (Intel TeraHerz), since the number of switching operations per second exceeds a trillion.
The devices are placed on the ultrathin silicon substrate above the insulating layer. From the traditional layout of #39;silicon-on-insulator#39; this substrate differs primarily in that made of depleted material which allows to generate the maximum drive current when the transistor, which increases the speed of switching. When the transistor is switched off leakage current is reduced to a minimum - this helps to thin insulating layer.
Thus, the drain current in the transistor on a substrate depleted to 100 times lower than devices that are consolidated under the traditional scheme.
Another innovation is a low-resistance contacts, built into the upper portion of the semiconductor layer. Because of this transistor has an extremely small size, high speed and low power consumption.
Compared with the silica #39;highly insulating gate dielectric K#39; is more than 10 thousand times reduces the leakage current through the gate, as produced using a fundamentally new technology called atomic layer deposition #39;and allowing the material to build up layers. The thickness of this layer is not more than one molecule. In practice, this means an increase in productivity, reduction of heat, a significant extension of the life of the batteries of mobile devices. Intel plans to begin commercialization of the components of the new design already in 2005
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