MOTOROLA PREPARES replace traditional FLASH-MEMORY
In place of the widely used today, Flash-memory company Motorola is preparing two new developments - SONOS and Q-flash.
According to the company, the memory technology with the floating gate transistors (floating gate) will soon exhaust its resources because of the impossibility of further reducing the size of the gate.
The first type of new memory, SONOS, is based on the composite material which consists of a layered cake scheme silicon-oxide-nitride-oxide-silicon (name stands Semiconductor Oxide Nitride Oxide Semiconductor, i.e. The memory cells are nitride layer under the gate of the transistor made of polycrystalline silicon. SONOS cheaper to manufacture and requires less power for the information recording and erasing - 6 to 10 V.
Supply samples SONOS, produced by 0.18-micron process technology, Motorola is going to start at the end of 2003. Migration to 0.9 microns is scheduled for early 2004.
The second novelty, Q-flash, uses as a memory silicon nanocrystals with a diameter of about 5 nm. Q-flash has a very long and preservation of information is even smaller size and lower power consumption than the SONOS. Protype Q-flash chips will be no earlier than 2005.
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